Characterization of Si/SiGe heterostructures on Si formed by solid phase reaction

Abstract

We have characterized the Si/Si(0.6)Ge(0.4) heterostructure formed by two-step solid-phase reaction. Single crystalline behavior is evidenced by X-ray diffraction. In sharp contrast to conventional strain-relaxed SiGe, an extremely smooth surface close to the Si substrate is measured by cross-sectional transmission electron microscopy and atomic force microscopy. Good material quality is further evidenced from the near identical current-voltage characteristics for thermal oxide grown on Si/Si(0.6)Ge(0.4) and on the Si control sample. (C) 2002 The Electrochemical Society.