Characterization of Si/SiGe heterostructures on Si formed by solid phase reaction
| dc.citation.epage | G211 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | G209 | en_US |
| dc.citation.volume | 149 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Huang, CH | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Chen, WJ | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:45Z | |
| dc.date.available | 2014-12-08T15:42:45Z | |
| dc.date.issued | 2002-03-01 | en_US |
| dc.description.abstract | We have characterized the Si/Si(0.6)Ge(0.4) heterostructure formed by two-step solid-phase reaction. Single crystalline behavior is evidenced by X-ray diffraction. In sharp contrast to conventional strain-relaxed SiGe, an extremely smooth surface close to the Si substrate is measured by cross-sectional transmission electron microscopy and atomic force microscopy. Good material quality is further evidenced from the near identical current-voltage characteristics for thermal oxide grown on Si/Si(0.6)Ge(0.4) and on the Si control sample. (C) 2002 The Electrochemical Society. | en_US |
| dc.identifier.doi | 10.1149/1.1450618 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.1450618 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28978 | |
| dc.identifier.wosnumber | WOS:000174211100052 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characterization of Si/SiGe heterostructures on Si formed by solid phase reaction | en_US |
| dc.type | Article | en_US |