A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications
| dc.citation.epage | 546 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 541 | en_US |
| dc.citation.volume | 52 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Yeh, CC | en_US |
| dc.contributor.author | Wang, TH | en_US |
| dc.contributor.author | Tsai, WJ | en_US |
| dc.contributor.author | Lu, TC | en_US |
| dc.contributor.author | Chen, MS | en_US |
| dc.contributor.author | Liao, YY | en_US |
| dc.contributor.author | Ting, WC | en_US |
| dc.contributor.author | Ku, YHJ | en_US |
| dc.contributor.author | Lu, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:19:29Z | |
| dc.date.available | 2014-12-08T15:19:29Z | |
| dc.date.issued | 2005-04-01 | en_US |
| dc.description.abstract | A novel programming by hot-hole injection nitride electron storage (PHINES) Flash memory technology is-developed. The memory bit size of 0.046 mu m(2) is fabricated based on 0.13-mu m technology. PHINES cell uses a nitride trapping storage cell structure. Fowler-Nordheim (FN) injection is performed to raise V-t in erase while programming is done by lowering a local V-t through hand-to-hand tunneling-induced hot hole (BTBT HH) injection. Two-bits-per-cell feasibility, low-power and high-speed program/erase, good endurance and data retentivity make it a promising candidate for Flash EEPROM technology in gigabit era applications. | en_US |
| dc.identifier.doi | 10.1109/TED.2005.845085 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2005.845085 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13882 | |
| dc.identifier.wosnumber | WOS:000227748500015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | band-to-band hot hole (BTB HH) | en_US |
| dc.subject | charge gain | en_US |
| dc.subject | charge loss | en_US |
| dc.subject | EEPROM | en_US |
| dc.subject | Flash memory cell | en_US |
| dc.subject | Flash memory | en_US |
| dc.subject | nitride storage | en_US |
| dc.subject | over-erasure | en_US |
| dc.title | A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications | en_US |
| dc.type | Article | en_US |