TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL
| dc.citation.epage | 464 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 461 | en_US |
| dc.citation.volume | 38 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | HUANG, CM | en_US |
| dc.contributor.author | WANG, TH | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:33Z | |
| dc.date.available | 2014-12-08T15:03:33Z | |
| dc.date.issued | 1995-02-01 | en_US |
| dc.description.abstract | A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 mu m. The importance of the two injection mechanisms, thermionic emission and quantum tunneling, is evaluated. | en_US |
| dc.identifier.doi | 10.1016/0038-1101(94)00087-V | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/0038-1101(94)00087-V | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2083 | |
| dc.identifier.wosnumber | WOS:A1995QE10900030 | |
| dc.language.iso | en_US | en_US |
| dc.title | TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL | en_US |
| dc.type | Article | en_US |