Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method
| dc.citation.epage | 1635 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 1629 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Weng, Peng-Hsiang | en_US |
| dc.contributor.author | Wu, Tzeng-Tsong | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:24:08Z | |
| dc.date.available | 2014-12-08T15:24:08Z | |
| dc.date.issued | 2012-11-01 | en_US |
| dc.description.abstract | In this paper, we have investigated the mode patterns in real space and reciprocal space, and threshold gain at different band edges in GaN-based photonic crystal surface-emitting lasers (PCSELs) by using the multiple-scattering method. The characteristics at each band edge (Gamma 1, K2, and M3) of PCSELs are simulated and discussed. In addition, GaN-based PCSELs operated at different band edges have been fabricated and measured. The experimental results of threshold show good agreement with the simulation results. | en_US |
| dc.identifier.doi | 10.1109/JSTQE.2011.2169237 | en_US |
| dc.identifier.issn | 1077-260X | en_US |
| dc.identifier.journal | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/JSTQE.2011.2169237 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16796 | |
| dc.identifier.wosnumber | WOS:000308664900002 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Distributed feedback (DFB) | en_US |
| dc.subject | GaN | en_US |
| dc.subject | multiple scattering | en_US |
| dc.subject | photonic crystal | en_US |
| dc.subject | surface-emitting lasers (SELs) | en_US |
| dc.title | Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method | en_US |
| dc.type | Article | en_US |