A CHARACTERIZATION MODEL FOR CONSTANT CURRENT STRESSED VOLTAGE-TIME CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE
| dc.citation.epage | 3944 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 3926 | en_US |
| dc.citation.volume | 60 | en_US |
| dc.citation.woscount | 13 | |
| dc.contributor.author | CHEN, CF | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:07Z | |
| dc.date.available | 2014-12-08T15:06:07Z | |
| dc.date.issued | 1986-12-01 | en_US |
| dc.identifier.doi | 10.1063/1.337515 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.337515 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4693 | |
| dc.identifier.wosnumber | WOS:A1986F077100022 | |
| dc.language.iso | en_US | en_US |
| dc.title | A CHARACTERIZATION MODEL FOR CONSTANT CURRENT STRESSED VOLTAGE-TIME CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE | en_US |
| dc.type | Article | en_US |
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