奈米隨機存取記憶體的長時間可靠度劣化現象分析與可容忍此劣化現象之設計
| dc.contributor.author | 莊景德 | en_US |
| dc.contributor.author | Chuang Ching-Te | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:49:40Z | |
| dc.date.available | 2014-12-13T10:49:40Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC98-2221-E009-112 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1904632&docId=315640 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/101736 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 奈米隨機存取記憶體的長時間可靠度劣化現象分析與可容忍此劣化現象之設計 | zh_TW |
| dc.title | Analysis of Long Term Degradation and Degradation-Tolerant Design of Nanoscale CMOS SRAM | en_US |
| dc.type | Plan | en_US |