BOND-STRUCTURE CHANGES OF LIQUID-PHASE DEPOSITED OXIDE (SIO2-XFX) ON N2 ANNEALING

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dc.citation.epage940en_US
dc.citation.issue8en_US
dc.citation.spage938en_US
dc.citation.volume66en_US
dc.citation.woscount12
dc.contributor.authorYEH, CFen_US
dc.contributor.authorCHEN, CLen_US
dc.contributor.authorLUR, Wen_US
dc.contributor.authorYEN, PWen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:03:31Z
dc.date.available2014-12-08T15:03:31Z
dc.date.issued1995-02-20en_US
dc.identifier.doi10.1063/1.113603en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.113603en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2045
dc.identifier.wosnumberWOS:A1995QH86100012
dc.language.isoen_USen_US
dc.titleBOND-STRUCTURE CHANGES OF LIQUID-PHASE DEPOSITED OXIDE (SIO2-XFX) ON N2 ANNEALINGen_US
dc.typeArticleen_US

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