Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor
| dc.citation.epage | en_US | |
| dc.citation.issue | 19 | en_US |
| dc.citation.volume | 90 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Wang, M. C. | en_US |
| dc.contributor.author | Chang, T. C. | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Tsao, S. W. | en_US |
| dc.contributor.author | Chen, J. R. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:14:03Z | |
| dc.date.available | 2014-12-08T15:14:03Z | |
| dc.date.issued | 2007-05-07 | en_US |
| dc.description.abstract | The photo-leakage-current (I-PLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (E-a) of a-Si:H(:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H(:F). Experimental results show that the I-PLC of a-Si:H(:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H(:F) material. However, the higher I-PLC is observed in the hole conduction region, resulted from the larger E-a in the a-Si:H(:F) TFTs. (C) 2007 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2738192 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2738192 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10807 | |
| dc.identifier.wosnumber | WOS:000246413400047 | |
| dc.language.iso | en_US | en_US |
| dc.title | Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor | en_US |
| dc.type | Article | en_US |