(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates
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10.1088/0953-8984/18/1/L03
Abstract
A series of diluted magnetic semiconductors, (In0.52Al0.48)(1-x)MnxAs (0 < x <= 0. 11), was successfully grown on InP substrate by low-temperature molecular beam epitaxy. Our results indicate that (In0.52Al0.48)(1-x)MnxAs exhibits interesting magnetic behaviours at 5 K: it shows paramagnetic-like behaviour when x <= 0.05 and ferromagnetic behaviour when x >= 0.06.