(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates
| dc.citation.epage | L20 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | L15 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Lee, WN | en_US |
| dc.contributor.author | Chen, YF | en_US |
| dc.contributor.author | Huang, JH | en_US |
| dc.contributor.author | Guo, XJ | en_US |
| dc.contributor.author | Kuo, CT | en_US |
| dc.contributor.author | Chin, TS | en_US |
| dc.contributor.author | Ku, HC | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:17:34Z | |
| dc.date.available | 2014-12-08T15:17:34Z | |
| dc.date.issued | 2006-01-11 | en_US |
| dc.description.abstract | A series of diluted magnetic semiconductors, (In0.52Al0.48)(1-x)MnxAs (0 < x <= 0. 11), was successfully grown on InP substrate by low-temperature molecular beam epitaxy. Our results indicate that (In0.52Al0.48)(1-x)MnxAs exhibits interesting magnetic behaviours at 5 K: it shows paramagnetic-like behaviour when x <= 0.05 and ferromagnetic behaviour when x >= 0.06. | en_US |
| dc.identifier.doi | 10.1088/0953-8984/18/1/L03 | en_US |
| dc.identifier.issn | 0953-8984 | en_US |
| dc.identifier.journal | JOURNAL OF PHYSICS-CONDENSED MATTER | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0953-8984/18/1/L03 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12741 | |
| dc.identifier.wosnumber | WOS:000234866700004 | |
| dc.language.iso | en_US | en_US |
| dc.title | (In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates | en_US |
| dc.type | Article | en_US |