High-Performance GaN MOSFET With High-k LaAlO(3)/SiO(2) Gate Dielectric

Abstract

Using a high-k LaAlO(3)/SiO(2) gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (V(t)) of 0.1 V, low on-resistance (R(on)) of 13.5 Omega . mm, high breakdown voltage of 385 V, high transconductance (g(m)) of 136 mS/mm, and record-best normalized drive current (mu C(ox)) of 172 mu A/V(2). Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-k gate dielectric and recessed-gate etching.