Thin oxides grown on disilane-based polysilicon

Abstract

This report describes the thin oxide (<10 nm) thermally grown on polysilicon film, which was prepared by disilane (Si2H6) chemical vapor deposition. In comparison with the thin oxide grown on conventional silane (SiH4) polysilicon film, the prepared oxides have lower leakage current,;. a lower electron trapping rate and a larger charge to breakdown distribution. These good properties are attributed to the smooth surface of the disilane poly-I film. This film is suitable for use as the interpoly oxide of electrically-erasable programmable read only memory.