Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning
| dc.citation.epage | 757 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 756 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chen, JH | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Su, TP | en_US |
| dc.contributor.author | Huang, SJ | en_US |
| dc.contributor.author | Tuan, A | en_US |
| dc.contributor.author | Chen, SK | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:23Z | |
| dc.date.available | 2014-12-08T15:45:23Z | |
| dc.date.issued | 2000-04-13 | en_US |
| dc.description.abstract | A low contact-resistance poly-plug structure realised by in-situ HF-vapour cleaning in a clustered tool is described. The native oxide in the contact area can be efficiently removed by the combination of an HF-dipping and in-situ HF-vapour cleaning process, resulting in a low specific contact resistance. | en_US |
| dc.identifier.doi | 10.1049/el:20000580 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20000580 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30583 | |
| dc.identifier.wosnumber | WOS:000086845500042 | |
| dc.language.iso | en_US | en_US |
| dc.title | Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning | en_US |
| dc.type | Article | en_US |