Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
| dc.citation.epage | 752 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 749 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Lin, GR | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Lin, CK | en_US |
| dc.contributor.author | Feng, M | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:58Z | |
| dc.date.available | 2014-12-08T15:18:58Z | |
| dc.date.issued | 2005-06-01 | en_US |
| dc.description.abstract | A novel top-illuminated In-0.53 Ga-0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate. | en_US |
| dc.identifier.doi | 10.1109/JQE.2005.847570 | en_US |
| dc.identifier.issn | 0018-9197 | en_US |
| dc.identifier.journal | IEEE JOURNAL OF QUANTUM ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/JQE.2005.847570 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13631 | |
| dc.identifier.wosnumber | WOS:000229356600001 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaAs | en_US |
| dc.subject | InGaP | en_US |
| dc.subject | In0.53Ga0.47As | en_US |
| dc.subject | metamorphic | en_US |
| dc.subject | p-i-n photodetector | en_US |
| dc.title | Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate | en_US |
| dc.type | Article | en_US |