FOWLER-NORDHEIM LIMITED BAND-TO-BAND TUNNELING (FNBB) FOR P-MOSFET GATE CURRENT IN A FLOATING BULK CONDITION
| dc.citation.epage | 137 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 135 | en_US |
| dc.citation.volume | 38 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | CHAO, KC | en_US |
| dc.contributor.author | CHEN, MJ | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:37Z | |
| dc.date.available | 2014-12-08T15:03:37Z | |
| dc.date.issued | 1995-01-01 | en_US |
| dc.description.abstract | A new mechanism of Fowler-Nordheim tunneling limited band-to-band tunneling (FNBB) has been identified to be responsible for the gate current measured from p-MOSFETs with the bulk (n-well) floated. This mechanism has been found to occur in the gate-to-drain overlap region. Two-dimensional device simulations have successfully reproduced this gate current and thus the physical parameter values of the band-to-band tunneling model have been obtained. | en_US |
| dc.identifier.doi | 10.1016/0038-1101(94)E0049-K | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/0038-1101(94)E0049-K | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2151 | |
| dc.identifier.wosnumber | WOS:A1995QC42000019 | |
| dc.language.iso | en_US | en_US |
| dc.title | FOWLER-NORDHEIM LIMITED BAND-TO-BAND TUNNELING (FNBB) FOR P-MOSFET GATE CURRENT IN A FLOATING BULK CONDITION | en_US |
| dc.type | Article | en_US |