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Single-crystalline delta-Ni2Si nanowires with excellent physical properties

dc.citation.epageen_US
dc.citation.issueen_US
dc.citation.volume8en_US
dc.citation.woscount5
dc.contributor.authorChiu, Wen-Lien_US
dc.contributor.authorChiu, Chung-Huaen_US
dc.contributor.authorChen, Jui-Yuanen_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorHuang, Yu-Tingen_US
dc.contributor.authorLu, Kuo-Changen_US
dc.contributor.authorHsin, Cheng-Lunen_US
dc.contributor.authorYeh, Ping-Hungen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:31:22Z
dc.date.available2014-12-08T15:31:22Z
dc.date.issued2013-06-19en_US
dc.description.abstractIn this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2 center dot 6H(2)O as a single-source precursor. Various morphologies of delta-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the delta-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/mu m), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation.en_US
dc.identifier.doi10.1186/1556-276X-8-290en_US
dc.identifier.issn1931-7573en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-8-290en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/22291
dc.identifier.wosnumberWOS:000321132000001
dc.language.isoen_USen_US
dc.subjectCVDen_US
dc.subjectNi2Si nanowiresen_US
dc.subjectField emissionen_US
dc.subjectFerromagnetic characteristicen_US
dc.titleSingle-crystalline delta-Ni2Si nanowires with excellent physical propertiesen_US
dc.typeArticleen_US

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