Low-power low-voltage reference using peaking current mirror circuit
| dc.citation.epage | 573 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 572 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 13 | |
| dc.contributor.author | Cheng, MH | en_US |
| dc.contributor.author | Wu, ZW | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:19:09Z | |
| dc.date.available | 2014-12-08T15:19:09Z | |
| dc.date.issued | 2005-05-12 | en_US |
| dc.description.abstract | A low-power low-voltage bandgap reference using the peaking current mirror circuit with MOSFETs operated in the subthreshold region is presented. A demonstrative chip was fabricated in 0.35 mu m CMOS technology, achieving the minimum supply voltage 1.4 V, the reference voltage around 580 mV, the temperature coefficient 62 ppm/degrees C, the supplied current 2.3 mu A, and the power supply noise rejection ratio of -84 dB at 1 kHz. | en_US |
| dc.identifier.doi | 10.1049/el:20050316 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20050316 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13722 | |
| dc.identifier.wosnumber | WOS:000229769900003 | |
| dc.language.iso | en_US | en_US |
| dc.title | Low-power low-voltage reference using peaking current mirror circuit | en_US |
| dc.type | Article | en_US |