Low-power low-voltage reference using peaking current mirror circuit
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DOI
10.1049/el:20050316
Abstract
A low-power low-voltage bandgap reference using the peaking current mirror circuit with MOSFETs operated in the subthreshold region is presented. A demonstrative chip was fabricated in 0.35 mu m CMOS technology, achieving the minimum supply voltage 1.4 V, the reference voltage around 580 mV, the temperature coefficient 62 ppm/degrees C, the supplied current 2.3 mu A, and the power supply noise rejection ratio of -84 dB at 1 kHz.