Suppressed Fin-LER Induced Variability in Negative Capacitance FinFETs

Abstract

This letter investigates the impact of fin lineedge roughness (Fin-LER) on the intrinsic variation of negative capacitanceFinFETs (NC-FinFETs) by TCAD atomistic simulation coupledwith the Landau-Khalatnikovequation. We report a feedback mechanism stemming from the internal voltage amplification inherent in the negative capacitance FET. This feedback mechanism results in the superior immunity to Fin-LER-induced threshold-voltage and subthreshold-swing variations for NC-FinFETs as compared with the FinFET counterparts. This lettermay provide insights for device/circuit designs using negative capacitance FETs.