<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

Suppressed Fin-LER Induced Variability in Negative Capacitance FinFETs

Simple item page
dc.citation.epage1495en_US
dc.citation.spage1492en_US
dc.citation.volume38en_US
dc.contributor.authorLee, Ho-Peien_US
dc.contributor.authorSu, Pinen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2018-08-21T05:52:50Z
dc.date.available2018-08-21T05:52:50Z
dc.date.issued2017-10-01en_US
dc.description.abstractThis letter investigates the impact of fin lineedge roughness (Fin-LER) on the intrinsic variation of negative capacitanceFinFETs (NC-FinFETs) by TCAD atomistic simulation coupledwith the Landau-Khalatnikovequation. We report a feedback mechanism stemming from the internal voltage amplification inherent in the negative capacitance FET. This feedback mechanism results in the superior immunity to Fin-LER-induced threshold-voltage and subthreshold-swing variations for NC-FinFETs as compared with the FinFET counterparts. This lettermay provide insights for device/circuit designs using negative capacitance FETs.en_US
dc.identifier.doi10.1109/LED.2017.2737025en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2017.2737025en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/143994
dc.identifier.wosnumberWOS:000413760600035en_US
dc.language.isoen_USen_US
dc.subjectVariabilityen_US
dc.subjectnegative capacitanceen_US
dc.subjectFinFETen_US
dc.subjectFin-LERen_US
dc.titleSuppressed Fin-LER Induced Variability in Negative Capacitance FinFETsen_US
dc.typeArticleen_US

Files

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description:
Download

Collections

期刊論文;;Articles