Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology

Abstract

This letter presents a deep submicron CMOS process that takes advantage of phosphorus transient enhanced diffusion (TED) to improve the hot carrier reliability of 3.3 V input/output transistors, Arsenic/phosphorus LDI) nMOSFETs with and without TED are fabricated. The TED effects on a LDD junction profile, device substrate current and transconductance degradation are evaluated, Substantial substrate current reduction and hot carrier lifetime improvement for the input/output devices are attained due to a more graded n(-) LDD doping profile by taking advantage of phosphorus TED.