Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
| dc.citation.epage | 600 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 598 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Wang, HCH | en_US |
| dc.contributor.author | Diaz, CH | en_US |
| dc.contributor.author | Liew, BK | en_US |
| dc.contributor.author | Sun, JYC | en_US |
| dc.contributor.author | Wang, TH | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:34Z | |
| dc.date.available | 2014-12-08T15:44:34Z | |
| dc.date.issued | 2000-12-01 | en_US |
| dc.description.abstract | This letter presents a deep submicron CMOS process that takes advantage of phosphorus transient enhanced diffusion (TED) to improve the hot carrier reliability of 3.3 V input/output transistors, Arsenic/phosphorus LDI) nMOSFETs with and without TED are fabricated. The TED effects on a LDD junction profile, device substrate current and transconductance degradation are evaluated, Substantial substrate current reduction and hot carrier lifetime improvement for the input/output devices are attained due to a more graded n(-) LDD doping profile by taking advantage of phosphorus TED. | en_US |
| dc.identifier.doi | 10.1109/55.887478 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.887478 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30092 | |
| dc.identifier.wosnumber | WOS:000165684000018 | |
| dc.language.iso | en_US | en_US |
| dc.subject | hot carriers | en_US |
| dc.subject | MOS devices | en_US |
| dc.subject | transient enhanced diffusion | en_US |
| dc.title | Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology | en_US |
| dc.type | Article | en_US |