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ANALYSIS OF THE DX TRAPS INDUCED TRANSIENT CHARACTERISTICS IN ALGAAS GAAS HEMTS

dc.citation.epage1087en_US
dc.citation.issue8en_US
dc.citation.spage1081en_US
dc.citation.volume33en_US
dc.citation.woscount1
dc.contributor.authorWANG, THen_US
dc.contributor.authorYU, CCen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:05:32Z
dc.date.available2014-12-08T15:05:32Z
dc.date.issued1990-08-01en_US
dc.identifier.doi10.1016/0038-1101(90)90223-2en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/0038-1101(90)90223-2en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4057
dc.identifier.wosnumberWOS:A1990DR88700016
dc.language.isoen_USen_US
dc.titleANALYSIS OF THE DX TRAPS INDUCED TRANSIENT CHARACTERISTICS IN ALGAAS GAAS HEMTSen_US
dc.typeArticleen_US

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