Low-Leakage Bidirectional SCR With Symmetrical Trigger Circuit for ESD Protection in 40-nm CMOS Process

Abstract

This paper presents a novel bidirectional electrostatic discharge protection device based on a dual silicon-controlled rectifier with a symmetrical trigger circuit. The proposed device has been realized and verified in a 40-nm CMOS process, which can pass a 3.75-kV HBMand a 250-VMM with a very low standby leakage current of similar to 27 nA at 25 degrees C and a bias voltage of 0.9 V with a silicon footprint of only 13 mu m x 100 mu m.