Electrical properties of high-kappa praseodymium oxide polycrystalline silicon thin-film transistors with nitrogen implantation

Abstract

This paper demonstrates the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with high-kappa praseodymium oxide (Pr(2)O(3)) gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Nitrogen atoms with various dosages are implanted into amorphous silicon (alpha-Si) film to passivate the grain boundary trap states during solid-phase crystallization (SPC) annealing. From experimental results, the electrical characteristics of the Pr(2)O(3) poly-Si TFT implanted with the nitrogen dosage of 5 x 10(12) cm(-2) could be greatly improved. In addition, a better hot-harrier immunity of high-kappa Pr(2)O(3) poly-Si TFT could be also obtained.