Electrical properties of high-kappa praseodymium oxide polycrystalline silicon thin-film transistors with nitrogen implantation
| dc.citation.epage | 856 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 853 | en_US |
| dc.citation.volume | 47 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Deng, Chih-Kang | en_US |
| dc.contributor.author | Chang, Hong-Ren | en_US |
| dc.contributor.author | Chiou, Bi-Shiou | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:38Z | |
| dc.date.available | 2014-12-08T15:12:38Z | |
| dc.date.issued | 2008-02-01 | en_US |
| dc.description.abstract | This paper demonstrates the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with high-kappa praseodymium oxide (Pr(2)O(3)) gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Nitrogen atoms with various dosages are implanted into amorphous silicon (alpha-Si) film to passivate the grain boundary trap states during solid-phase crystallization (SPC) annealing. From experimental results, the electrical characteristics of the Pr(2)O(3) poly-Si TFT implanted with the nitrogen dosage of 5 x 10(12) cm(-2) could be greatly improved. In addition, a better hot-harrier immunity of high-kappa Pr(2)O(3) poly-Si TFT could be also obtained. | en_US |
| dc.identifier.doi | 10.1143/JJAP.47.853 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.47.853 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9700 | |
| dc.identifier.wosnumber | WOS:000255019700009 | |
| dc.language.iso | en_US | en_US |
| dc.subject | polycrystalline silicon (poly-Si) thin-film transistor (TFT) | en_US |
| dc.subject | praseodymium oxide (Pr(2)O(3)) nitrogen implantation | en_US |
| dc.subject | solidphase crystallization (SPC) | en_US |
| dc.title | Electrical properties of high-kappa praseodymium oxide polycrystalline silicon thin-film transistors with nitrogen implantation | en_US |
| dc.type | Article | en_US |