ELECTRICAL CHARACTERIZATION OF ARSENIC-ION-IMPLANTED SEMIINSULATING GAAS BY CURRENT-VOLTAGE MEASUREMENT
| dc.citation.epage | 3274 | en_US |
| dc.citation.issue | 25 | en_US |
| dc.citation.spage | 3272 | en_US |
| dc.citation.volume | 65 | en_US |
| dc.citation.woscount | 24 | |
| dc.contributor.author | LIN, GR | en_US |
| dc.contributor.author | CHEN, WC | en_US |
| dc.contributor.author | CHANG, CS | en_US |
| dc.contributor.author | PAN, CL | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:39Z | |
| dc.date.available | 2014-12-08T15:03:39Z | |
| dc.date.issued | 1994-12-19 | en_US |
| dc.identifier.doi | 10.1063/1.112434 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.112434 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2173 | |
| dc.identifier.wosnumber | WOS:A1994PX64100036 | |
| dc.language.iso | en_US | en_US |
| dc.title | ELECTRICAL CHARACTERIZATION OF ARSENIC-ION-IMPLANTED SEMIINSULATING GAAS BY CURRENT-VOLTAGE MEASUREMENT | en_US |
| dc.type | Article | en_US |
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