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10-Gb/s modulator drivers with local feedback networks

dc.citation.epage1030en_US
dc.citation.issue5en_US
dc.citation.spage1025en_US
dc.citation.volume41en_US
dc.citation.woscount4
dc.contributor.authorLi, DUen_US
dc.contributor.authorTsai, CMen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:16:40Z
dc.date.available2014-12-08T15:16:40Z
dc.date.issued2006-05-01en_US
dc.description.abstractA novel intrinsic collector-base capacitance (C(CB)) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-mu m SiGe BiCMOS process could generate 9 V(PP) differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V(PP) in 0.18-mu m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported Silicon-based drivers.en_US
dc.identifier.doi10.1109/JSSC.2006.872878en_US
dc.identifier.issn0018-9200en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2006.872878en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12292
dc.identifier.wosnumberWOS:000237210500003
dc.language.isoen_USen_US
dc.subjectintrinsic collector-base capacitanceen_US
dc.subjectintrinsic drain-gate capacitanceen_US
dc.subjectlaser driversen_US
dc.subjectmodulator driversen_US
dc.subjectsilicon-baseden_US
dc.subject10 Gb/sen_US
dc.title10-Gb/s modulator drivers with local feedback networksen_US
dc.typeArticleen_US

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