Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current

Abstract

In this article, we have systematically investigated the impact of different structural parameters on the breakdown voltage for GaN-based trench MIS barrier-controlled Schottky (TMBS) rectifier. Compared with the planar Schottky rectifier, the TMBS rectifier has field plates on the mesa sidewalls so that the drift region can be depleted in a 2-D manner, which helps to decrease the electric field at the metal/mesa interface. However, the adoption of mesas can make the electric potential lines at the mesa corner dense and has large curvatures. Therefore, the premature breakdown can occur when the electric field therein reaches the critical condition. We find that the electric field profiles can be affected by insulation layer thickness, mesa width, trench depth, and different types of insulation layers. Then, we increase the breakdown voltage by homogenizing the electric field distribution in the mesa region, e.g., the electric field at mesa corners can be decreased by adopting properly thick sidewall insulator and small trench depth. Meanwhile, TMBS rectifier using sidewall insulating material with a large dielectric constant more favors a large breakdown voltage.