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THE EFFECTS OF THERMAL NITRIDATION CONDITIONS ON THE RELIABILITY OF THIN NITRIDED OXIDE-FILMS

dc.citation.epage145en_US
dc.citation.issue4en_US
dc.citation.spage143en_US
dc.citation.volume8en_US
dc.citation.woscount25
dc.contributor.authorTSAI, HHen_US
dc.contributor.authorWU, LCen_US
dc.contributor.authorWU, CYen_US
dc.contributor.authorHU, CMen_US
dc.contributor.department工學院zh_TW
dc.contributor.departmentCollege of Engineeringen_US
dc.date.accessioned2014-12-08T15:06:05Z
dc.date.available2014-12-08T15:06:05Z
dc.date.issued1987-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4649
dc.identifier.wosnumberWOS:A1987G609400006
dc.language.isoen_USen_US
dc.titleTHE EFFECTS OF THERMAL NITRIDATION CONDITIONS ON THE RELIABILITY OF THIN NITRIDED OXIDE-FILMSen_US
dc.typeArticleen_US

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