Perylenetetracarboxylic di-imide-based bottom-contact devices: A study on two kinds of source/drain electrodes, ITO and MoW
| dc.citation.epage | 175 | en_US |
| dc.citation.issue | 1-2 | en_US |
| dc.citation.spage | 171 | en_US |
| dc.citation.volume | 159 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Kao, Chia-Chun | en_US |
| dc.contributor.author | Lin, Pang | en_US |
| dc.contributor.author | Shen, Yu-Yuan | en_US |
| dc.contributor.author | Yan, Jing-Yi | en_US |
| dc.contributor.author | Ho, Jia-Chong | en_US |
| dc.contributor.author | Lee, Cheng-Chung | en_US |
| dc.contributor.author | Chan, Li-Hsin | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:10:19Z | |
| dc.date.available | 2014-12-08T15:10:19Z | |
| dc.date.issued | 2009-01-01 | en_US |
| dc.description.abstract | High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis(4-trifluoromethoxybenzyl)-perylene-3,4,9,10-tetracarboxylic di-imide, were fabricated, and the effects of crystal packing on indium tin oxide and molybdenum-tungsten alloy were shown in two different electric characteristics. The estimated work function of indium tin oxide and molybdenum-tungsten alloy were 4.7 and 5.0eV. The calculated lowest unoccupied molecular orbital energy level of the organic material was 3.7eV. Transistors with indium tin oxide bottom electrodes exhibited a high mobility of 3.37 x 10(2) cm(2) V(-1) s(1), an on/off current ratio of 6.5 x 10(5) and threshold voltage of-4.0 V. (C) 2008 Elsevier B.V All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.synthmet.2008.08.018 | en_US |
| dc.identifier.issn | 0379-6779 | en_US |
| dc.identifier.journal | SYNTHETIC METALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.synthmet.2008.08.018 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7878 | |
| dc.identifier.wosnumber | WOS:000263990500030 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Organic thin-film transistors (OTFTs) | en_US |
| dc.subject | n-Type | en_US |
| dc.subject | Perylene | en_US |
| dc.title | Perylenetetracarboxylic di-imide-based bottom-contact devices: A study on two kinds of source/drain electrodes, ITO and MoW | en_US |
| dc.type | Article | en_US |