Resistive switching characteristics of nickel silicide layer embedded HfO2 film

Abstract

Resistive switching behavior of the Ti/HfO2:NiSi:HfO2/Pt memory structure is investigated. Auger electron spectroscopy analysis indicates no metal diffusion from the electrodes and silicide layer on high-k film. Cross-sectional transmission electron microscopic micrographs revealed the thicknesses of the HfO2 and silicide layer. Significant decrease of forming voltage is observed for the 550 degrees C, 1 min annealed device embedded with nickel silicide (NiSi) layers. Entire device shows bipolar switching properties with very low set/reset voltage. The optimized annealed device with NiSi embedded layer exhibits improved memory performances such as good on/off ratio (>10(2)), long retention more than 10(4)s, and reasonable endurance (>10(3) cycles). A conducting filament model based on two stacks structure is employed to well explain the switching behaviors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694045]