Resistive switching characteristics of nickel silicide layer embedded HfO2 film
| dc.citation.epage | en_US | |
| dc.citation.issue | 11 | en_US |
| dc.citation.volume | 100 | en_US |
| dc.citation.woscount | 21 | |
| dc.contributor.author | Panda, Debashis | en_US |
| dc.contributor.author | Huang, Chun-Yang | en_US |
| dc.contributor.author | Tseng, Tseung-Yuen | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:22:51Z | |
| dc.date.available | 2014-12-08T15:22:51Z | |
| dc.date.issued | 2012-03-12 | en_US |
| dc.description.abstract | Resistive switching behavior of the Ti/HfO2:NiSi:HfO2/Pt memory structure is investigated. Auger electron spectroscopy analysis indicates no metal diffusion from the electrodes and silicide layer on high-k film. Cross-sectional transmission electron microscopic micrographs revealed the thicknesses of the HfO2 and silicide layer. Significant decrease of forming voltage is observed for the 550 degrees C, 1 min annealed device embedded with nickel silicide (NiSi) layers. Entire device shows bipolar switching properties with very low set/reset voltage. The optimized annealed device with NiSi embedded layer exhibits improved memory performances such as good on/off ratio (>10(2)), long retention more than 10(4)s, and reasonable endurance (>10(3) cycles). A conducting filament model based on two stacks structure is employed to well explain the switching behaviors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694045] | en_US |
| dc.identifier.doi | 112901 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/112901 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16115 | |
| dc.identifier.wosnumber | WOS:000302204900055 | |
| dc.language.iso | en_US | en_US |
| dc.title | Resistive switching characteristics of nickel silicide layer embedded HfO2 film | en_US |
| dc.type | Article | en_US |