ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION

Abstract

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900-degrees-C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device.