ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION
| dc.citation.epage | 122 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 120 | en_US |
| dc.citation.volume | 15 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | WU, SL | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.author | CHEN, CF | en_US |
| dc.contributor.author | CHEN, LJ | en_US |
| dc.contributor.author | HO, KZ | en_US |
| dc.contributor.author | LING, YC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:04Z | |
| dc.date.available | 2014-12-08T15:04:04Z | |
| dc.date.issued | 1994-04-01 | en_US |
| dc.description.abstract | In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900-degrees-C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device. | en_US |
| dc.identifier.doi | 10.1109/55.285410 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.285410 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2570 | |
| dc.identifier.wosnumber | WOS:A1994NK10700002 | |
| dc.language.iso | en_US | en_US |
| dc.title | ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION | en_US |
| dc.type | Article | en_US |