Post-implantation thermal annealing effect on the gate oxide of triple-well-structure

Abstract

In this work, we investigate the effect of post-implantation thermal annealing on the quality of thin gate oxides grown on MeV ion-implanted Si substrates for the triple-well structure. The thin gate oxide grown on the MeV ion-implanted Si substrates without post-implantation thermal annealing may contain pinholes, leading to oxide failure at a very low voltage; in addition, the gate oxide has a higher density of interface states, which may result in a low breakdown voltage. With appropriate post-implantation thermal annealing before the growth of the gate oxide, e.g., 1000degreesC for 30 min under the MeV implantation conditions employed in this work, the gate oxide is able to regain its integrity in terms of electrical breakdown voltage.