High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films

Abstract

In this process, amorphous silicon was first transformed to polycrystalline silicon (poly-Si) using a metal-induced lateral crystallisation (MILC) process, followed by annealing with a continuous-wave laser lateral (lambda similar to 532 nm) crystallisation (CLC) with an output power of 3.8 W. MILC-CLC-TFT performed far superior to MILC-TFT. The mobility of the MILC-CLC-TFT was 293 cm(2)/Vs, which was much higher than that of MILC TFTs (54.8 cm(2)/Vs). In addition, MILC-CLC TFTs showed better device uniformity and reliability.