High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films
| dc.citation.epage | U21 | en_US |
| dc.citation.issue | 19 | en_US |
| dc.citation.spage | 1157 | en_US |
| dc.citation.volume | 44 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Chang, C. -P. | en_US |
| dc.contributor.author | Wu, Y. S. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:10:55Z | |
| dc.date.available | 2014-12-08T15:10:55Z | |
| dc.date.issued | 2008-09-11 | en_US |
| dc.description.abstract | In this process, amorphous silicon was first transformed to polycrystalline silicon (poly-Si) using a metal-induced lateral crystallisation (MILC) process, followed by annealing with a continuous-wave laser lateral (lambda similar to 532 nm) crystallisation (CLC) with an output power of 3.8 W. MILC-CLC-TFT performed far superior to MILC-TFT. The mobility of the MILC-CLC-TFT was 293 cm(2)/Vs, which was much higher than that of MILC TFTs (54.8 cm(2)/Vs). In addition, MILC-CLC TFTs showed better device uniformity and reliability. | en_US |
| dc.identifier.doi | 10.1049/el:20081620 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20081620 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8355 | |
| dc.identifier.wosnumber | WOS:000259155000036 | |
| dc.language.iso | en_US | en_US |
| dc.title | High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films | en_US |
| dc.type | Article | en_US |