Long-Wavelength In-Plane Gate InAs Quantum-Dot Phototransistors

dc.citation.epage	263	en_US
dc.citation.spage	261	en_US
dc.citation.volume	27	en_US
dc.citation.woscount	0	en_US
dc.contributor.author	Chen, Hsuan-An	en_US
dc.contributor.author	Shih, Tung-Chuan	en_US
dc.contributor.author	Lin, Shih-Yen	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2015-07-21T08:28:58Z
dc.date.available	2015-07-21T08:28:58Z
dc.date.issued	2015-02-01	en_US
dc.description.abstract	In-plane gate transistors with and without an InAs quantum-dot (QD) absorption layer are investigated. The n-GaAs channel acts as both an absorption layer for incident light with energy higher than the GaAs bandgap and the transport path for the photocurrents. The insertion of InAs QD layer not only extends the absorption wavelength to 1.26 mu m, but also enhances the optical response from GaAs.	en_US
dc.identifier.doi	10.1109/LPT.2014.2367515	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2014.2367515	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/124359
dc.identifier.wosnumber	WOS:000349190700010	en_US
dc.language.iso	en_US	en_US
dc.subject	In-plane gate transistors	en_US
dc.subject	InAs quantum dots	en_US
dc.title	Long-Wavelength In-Plane Gate InAs Quantum-Dot Phototransistors	en_US
dc.type	Article	en_US

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