Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
| dc.citation.epage | 3509 | en_US |
| dc.citation.issue | 26 | en_US |
| dc.citation.volume | 24 | en_US |
| dc.citation.woscount | 30 | |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Yeh, Chun-Cheng | en_US |
| dc.contributor.author | Meng, Hsin-Fei | en_US |
| dc.contributor.author | Tsai, Chuang-Chuang | en_US |
| dc.contributor.author | Chen, Liang-Hao | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:29Z | |
| dc.date.available | 2014-12-08T15:23:29Z | |
| dc.date.issued | 2012-07-10 | en_US |
| dc.identifier.issn | 0935-9648 | en_US |
| dc.identifier.journal | ADVANCED MATERIALS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16435 | |
| dc.identifier.wosnumber | WOS:000305943900007 | |
| dc.language.iso | en_US | en_US |
| dc.subject | high mobility | en_US |
| dc.subject | oxide semiconductors | en_US |
| dc.subject | thin film transistors | en_US |
| dc.subject | defect reduction | en_US |
| dc.subject | oxygen deficiency | en_US |
| dc.title | Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer | en_US |
| dc.type | Article | en_US |