Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode
| dc.citation.epage | 1097 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1095 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.citation.woscount | 45 | |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Pan, H. C. | en_US |
| dc.contributor.author | Yang, H. J. | en_US |
| dc.contributor.author | Hsiao, C. N. | en_US |
| dc.contributor.author | Chou, C. P. | en_US |
| dc.contributor.author | McAlister, S. P. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 機械工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Mechanical Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:13:03Z | |
| dc.date.available | 2014-12-08T15:13:03Z | |
| dc.date.issued | 2007-12-01 | en_US |
| dc.description.abstract | We have fabricated high-kappa. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 x 10(-7) A/cm(2) was obtained at 125 degrees C for 24-fF/mu m(2) density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset. | en_US |
| dc.identifier.doi | 10.1109/LED.2007.909612 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2007.909612 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10061 | |
| dc.identifier.wosnumber | WOS:000251429800007 | |
| dc.language.iso | en_US | en_US |
| dc.subject | high-kappa | en_US |
| dc.subject | Ir | en_US |
| dc.subject | metal-insulator-metal (MIM) | en_US |
| dc.subject | TiLaO | en_US |
| dc.title | Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode | en_US |
| dc.type | Article | en_US |