A QUASI-2-DIMENSIONAL ANALYTICAL MODEL FOR THE TURN-ON CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
| dc.citation.epage | 674 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 666 | en_US |
| dc.citation.volume | 37 | en_US |
| dc.citation.woscount | 59 | |
| dc.contributor.author | LIN, PS | en_US |
| dc.contributor.author | GUO, JY | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:37Z | |
| dc.date.available | 2014-12-08T15:05:37Z | |
| dc.date.issued | 1990-03-01 | en_US |
| dc.identifier.doi | 10.1109/16.47771 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.47771 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4160 | |
| dc.identifier.wosnumber | WOS:A1990CR84400020 | |
| dc.language.iso | en_US | en_US |
| dc.title | A QUASI-2-DIMENSIONAL ANALYTICAL MODEL FOR THE TURN-ON CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS | en_US |
| dc.type | Article | en_US |