BARRIER EFFECT OF E-BEAM EVAPORATED TUNGSTEN INTERLAYER IN AL/W/PTSI METALLIZATION LAYER
| dc.citation.epage | 404 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 397 | en_US |
| dc.citation.volume | 17 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | CHIOU, BS | en_US |
| dc.contributor.author | LO, HS | en_US |
| dc.contributor.author | CHANG, PH | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:57Z | |
| dc.date.available | 2014-12-08T15:05:57Z | |
| dc.date.issued | 1988-09-01 | en_US |
| dc.identifier.doi | 10.1007/BF02652125 | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/BF02652125 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4490 | |
| dc.identifier.wosnumber | WOS:A1988Q130800010 | |
| dc.language.iso | en_US | en_US |
| dc.title | BARRIER EFFECT OF E-BEAM EVAPORATED TUNGSTEN INTERLAYER IN AL/W/PTSI METALLIZATION LAYER | en_US |
| dc.type | Article | en_US |
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