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THE EFFECT OF GATE ELECTRODES USING TUNGSTEN SILICIDES AND OR POLYSILICON ON THE DIELECTRIC CHARACTERISTICS OF VERY THIN OXIDES

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Date

1990-03-01

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10.1016/0038-1101(90)90202-P

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http://dx.doi.org/10.1016/0038-1101(90)90202-P
 https://ir.lib.nycu.edu.tw/handle/11536/4162

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期刊論文;;Articles

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