High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation

Abstract

In this letter, we demonstrate a high-performance 0.1 mu m Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., < 0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low V-th simutaneously, which results in an excellent performance for the indium-implanted DTMOS.