THE DIELECTRIC RELIABILITY OF INTRINSIC THIN SIO2-FILMS THERMALLY GROWN ON A HEAVILY DOPED SI SUBSTRATE - CHARACTERIZATION AND MODELING
| dc.citation.epage | 1552 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1540 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 44 | |
| dc.contributor.author | CHEN, CF | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.author | LEE, MK | en_US |
| dc.contributor.author | CHEN, CN | en_US |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:03Z | |
| dc.date.available | 2014-12-08T15:06:03Z | |
| dc.date.issued | 1987-07-01 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4627 | |
| dc.identifier.wosnumber | WOS:A1987H858400017 | |
| dc.language.iso | en_US | en_US |
| dc.title | THE DIELECTRIC RELIABILITY OF INTRINSIC THIN SIO2-FILMS THERMALLY GROWN ON A HEAVILY DOPED SI SUBSTRATE - CHARACTERIZATION AND MODELING | en_US |
| dc.type | Article | en_US |