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THE EFFECT OF LAYOUT, SUBSTRATE WELL BIASES, AND TRIGGERING SOURCE LOCATION ON LATCHUP TRIGGERING CURRENTS IN BULK CMOS CIRCUITS

dc.citation.epage279en_US
dc.citation.issue4en_US
dc.citation.spage269en_US
dc.citation.volume32en_US
dc.citation.woscount0
dc.contributor.authorYANG, YHen_US
dc.contributor.authorWU, CYen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:05:51Z
dc.date.available2014-12-08T15:05:51Z
dc.date.issued1989-04-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4389
dc.identifier.wosnumberWOS:A1989U203600002
dc.language.isoen_USen_US
dc.titleTHE EFFECT OF LAYOUT, SUBSTRATE WELL BIASES, AND TRIGGERING SOURCE LOCATION ON LATCHUP TRIGGERING CURRENTS IN BULK CMOS CIRCUITSen_US
dc.typeArticleen_US

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