A quantum trap MONOS memory device using AlN
| dc.citation.epage | G741 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | G738 | en_US |
| dc.citation.volume | 153 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lai, CH | en_US |
| dc.contributor.author | Wu, CH | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Wang, SJ | en_US |
| dc.contributor.author | McAlister, SP | en_US |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.date.accessioned | 2014-12-08T15:17:43Z | |
| dc.date.available | 2014-12-08T15:17:43Z | |
| dc.date.issued | 2006 | en_US |
| dc.description.abstract | We report a IrO2-HfAlO-AlN-SiO2-Si MONOS device that displays excellent characteristics in terms of speed (100 mu s at +/- 13 V for program/erase) and memory window (3.7 V) at 85 degrees C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85 degrees C. The achieved performance compares well with the best reported memory device data. (c) 2006 The Electrochemical Society. | en_US |
| dc.identifier.doi | 10.1149/1.2208742 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.2208742 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12863 | |
| dc.identifier.wosnumber | WOS:000238470100059 | |
| dc.language.iso | en_US | en_US |
| dc.title | A quantum trap MONOS memory device using AlN | en_US |
| dc.type | Article | en_US |