Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors
| dc.citation.epage | 2580 | en_US |
| dc.citation.issue | 14 | en_US |
| dc.citation.spage | 2578 | en_US |
| dc.citation.volume | 81 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Chen, KM | en_US |
| dc.contributor.author | Huang, GW | en_US |
| dc.contributor.author | Chiu, DY | en_US |
| dc.contributor.author | Huang, HJ | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:56Z | |
| dc.date.available | 2014-12-08T15:41:56Z | |
| dc.date.issued | 2002-09-30 | en_US |
| dc.description.abstract | Low-frequency noise in boron-doped polycrystalline silicon-germanium (poly-Si1-xGex) resistors at various temperatures is studied. The poly-Si1-xGex films with 0%similar to36% Ge content were grown using ultrahigh vacuum chemical molecular epitaxy system. We find that the low-frequency noise in poly-Si1-xGex decreases with increasing Ge content, due to the lower potential barrier height of grain boundaries in higher Ge content samples. Moreover, the low-frequency noise decreases with increasing temperature. These results are well explained by the carrier mobility fluctuation model. (C) 2002 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1511815 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1511815 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28515 | |
| dc.identifier.wosnumber | WOS:000178182600030 | |
| dc.language.iso | en_US | en_US |
| dc.title | Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors | en_US |
| dc.type | Article | en_US |